Infineon Applied sciences AG has partnered with FOXESS, a outstanding participant within the inexperienced vitality sector, to reinforce the effectivity and energy density of vitality storage purposes. Infineon will provide its superior energy semiconductor units to FOXESS, facilitating the event of revolutionary options within the inexperienced vitality trade.
Particularly, Infineon will present FOXESS with its CoolSiC MOSFETs 1200 V for industrial vitality storage purposes, together with EiceDRIVER gate drivers. Moreover, FOXESS’ string PV inverters will make the most of Infineon’s IGBT7 H7 1200 V energy semiconductor units.
FOXESS’ H3PRO vitality storage collection makes use of Infineon’s CoolSiC MOSFETs 1200 V.
As the worldwide marketplace for photovoltaic vitality storage methods (PV-ES) continues to broaden quickly, enhancing energy density has change into essential for fulfillment. Infineon’s energy semiconductor units, together with CoolSiC MOSFET 1200 V and IGBT7 H7 1200 V collection, incorporate state-of-the-art semiconductor applied sciences tailor-made to industrial purposes, addressing the rising demand for effectivity and energy density in vitality storage purposes.
Mr. Yu Daihui, Senior Vice President and Head of Industrial & Infrastructure at Infineon Applied sciences Larger China, expressed satisfaction in collaborating with FOXESS to drive decarbonization via larger energy density and extra dependable methods for PV-ES purposes.
FOXESS’ R Sequence redefines the general design of the 100 kW mannequin through the use of Infineon’s IGBT7 H7 collection.
Mr. Zhu Jingcheng, Chairman of FOXESS, highlighted the numerous enhancements in product reliability and effectivity achieved via the help of Infineon’s superior parts. He emphasised Infineon’s technical experience and product high quality as key components strengthening FOXESS’ competitiveness and market presence.
Infineon’s CoolSiC MOSFETs 1200 V supply excessive energy density, decreasing losses by 50 p.c and offering extra vitality with out rising battery measurement. FOXESS’ H3PRO 15 kW-30 kW vitality storage collection, geared up with Infineon’s CoolSiC MOSFETs, has achieved outstanding effectivity and gross sales development within the world market.
Equally, Infineon’s TRENCHSTOP IGBT7 H7 650 V / 1200 V collection enhances the general effectivity and energy density of inverters. By leveraging Infineon’s superior energy semiconductor units, FOXESS has optimized the design of its R Sequence 75-110 kW industrial and industrial mannequin, attaining excellent effectivity of as much as 98.6 p.c.
Infineon presents a complete vary of EiceDRIVER gate drivers, guaranteeing nice integration with all energy units, together with CoolSiC and IGBTs, simplifying design processes, and enhancing system reliability.
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